We review the recent advances in the development of semiconductor disk lasers (SDLs) producing yellow-orange and mid-IR\r\nradiation. In particular, we focus on presenting the fabrication challenges and characteristics of high-power GaInNAs- and GaSbbased\r\ngain mirrors. These two material systems have recently sparked a new wave of interest in developing SDLs for high-impact\r\napplications in medicine, spectroscopy, or astronomy. The dilute nitride (GaInNAs) gain mirrors enable emission of more than\r\n11Wof output power at a wavelength range of 1180ââ?¬â??1200nm and subsequent intracavity frequency doubling to generate yelloworange\r\nradiation with power exceeding 7W. The GaSb gain mirrors have been used to leverage the advantages offered by SDLs to\r\nthe 2ââ?¬â??3 Ã?µmwavelength range.Most recently, GaSb-based SDLs incorporating semiconductor saturable absorber mirrors were used\r\nto generate optical pulses as short as 384 fs at 2 Ã?µm, the shortest pulses obtained from a semiconductor laser at this wavelength\r\nrange.
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